Transient annealing of semiconductors by laser, electron beam and radiant hating techniquesCULLIS, A. G.Reports on Progress in Physics (Print). 1985, Vol 48, Num 8, pp 1155-1233, issn 0034-4885Article

Transient annealing of semiconductors by laser, electron beam and radiant heating techniquesCULLIS, A. G.Reports on Progress in Physics (Print). 1985, Vol 48, Num 8, pp 1155-1233, issn 0034-4885Article

Simple method for determining the absolute sense of image rotation in a transmission electron microscopeNAKAHARA, S; CULLIS, A. G.Ultramicroscopy. 1992, Vol 45, Num 3-4, pp 365-370, issn 0304-3991Article

GaAs(0 0 1 ) planarization after conventional oxide removal utilising self-governed InAs QD site selectionBASTIMAN, F; CULLIS, A. G.Applied surface science. 2010, Vol 256, Num 13, pp 4269-4271, issn 0169-4332, 3 p.Article

As-rich reconstruction stability observed by high temperature scanning tunnelling microscopyBASTIMAN, F; CULLIS, A. G; HOPKINSON, M et al.Journal of crystal growth. 2009, Vol 311, Num 20, pp 4478-4482, issn 0022-0248, 5 p.Article

GaAs(001 ) (2 x 4) to c(4 x 4) transformation observed in situ by STM during As flux irradiationBASTIMAN, F; CULLIS, A. G; HOPKINSON, M et al.Surface science. 2009, Vol 603, Num 16, pp 2398-2402, issn 0039-6028, 5 p.Article

Effect of anneal temperature on GaN nucleation layer transformationLADA, M; CULLIS, A. G; PARBROOK, P. J et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 89-99, issn 0022-0248, 11 p.Article

Vibrational spectrum and order of laser-quenched amorphous siliconMALEY, N; LANNIN, J. S; CULLIS, A. G et al.Physical review letters. 1984, Vol 53, Num 16, pp 1571-1573, issn 0031-9007Article

InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STMBASTIMAN, F; CULLIS, A. G; HOPKINSON, M et al.Surface science. 2009, Vol 603, Num 24, pp 3439-3444, issn 0039-6028, 6 p.Article

The structure of ZnS thin films deposited by r.f. sputteringBLACKMORE, J. M; CULLIS, A. G.Thin solid films. 1991, Vol 199, Num 2, pp 321-334, issn 0040-6090Article

Iodine ion milling of indium-containing compound semiconductorsCHEW, N. G; CULLIS, A. G.Applied physics letters. 1984, Vol 44, Num 1, pp 142-144, issn 0003-6951Article

Visible light emission due to quantum size effects in highly porous crystalline siliconCULLIS, A. G; CANHAM, L. T.Nature (London). 1991, Vol 353, Num 6342, pp 335-338, issn 0028-0836Article

The preparation of transmission electron microscope specimens from compound semiconductors by ion millingCHEW, N. G; CULLIS, A. G.Ultramicroscopy. 1987, Vol 23, Num 2, pp 175-198, issn 0304-3991Article

Manufacture of amorphous GeSn alloysCHANG, I. T. H; CANTOR, B; CULLIS, A. G et al.Journal of non-crystalline solids. 1990, Vol 117-118, pp 263-266, issn 0022-3093, 1Conference Paper

Formation and elimination of surface ion milling defects in cadmium telluride, zinc sulphide and zinc selenideCULLIS, A. G; CHEW, N. G; HUTCHISON, J. L et al.Ultramicroscopy. 1985, Vol 17, Num 3, pp 203-211, issn 0304-3991Article

Identification of tellurium precipitates in cadmium telluride layers grown by molecular beam epitaxyCHEW, N. G; CULLIS, A. G; WILLIAMS, G. M et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1090-1092, issn 0003-6951Article

Computer simulation of high speed melting of amorphous siliconWEBBER, H. C; CULLIS, A. G; CHEW, N. G et al.Applied physics letters. 1983, Vol 43, Num 7, pp 669-671, issn 0003-6951Article

Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial systemCULLIS, A. G; PIDDUCK, A. J; EMENY, M. T et al.Journal of crystal growth. 1996, Vol 158, Num 1-2, pp 15-27, issn 0022-0248Article

First direct observation of voids in bulk, indoped, semi-insulatying GaAsWILLIAMS, G. M; CULLIS, A. G; STIRLAND, D. J et al.Applied physics letters. 1991, Vol 59, Num 20, pp 2585-2587, issn 0003-6951Article

Amorphization of germanium, gallium phosphide, and gallium arsenide by laser quenching from the meltCULLIS, A. G; WEBBER, H. C; CHEW, N. G et al.Applied physics letters. 1983, Vol 42, Num 10, pp 875-877, issn 0003-6951Article

Fabrication of a novel SEM microgripper by electrochemical and FIB techniquesBRISTON, K. J; CULLIS, A. G; INKSON, B. J et al.Journal of micromechanics and microengineering (Print). 2010, Vol 20, Num 1, issn 0960-1317, 015028.1-015028.5Article

Growth interfaces of Si_1-xGe_x/Si heterostructures studied by in situ laser light scatteringROBBINS, D. J; CULLIS, A. G; PIDDUCK, A. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 2048-2053, issn 0734-211XConference Paper

Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour depositionLUXMOORE, I. J; ROSS, I. M; CULLIS, A. G et al.Thin solid films. 2007, Vol 515, Num 17, pp 6791-6797, issn 0040-6090, 7 p.Article

V-shaped pits formed at the GaN/AlN interfaceBAI, J; WANG, T; PARBROOK, P. J et al.Journal of crystal growth. 2006, Vol 289, Num 1, pp 63-67, issn 0022-0248, 5 p.Article

SiGe quantum cascade structures for light emitting devicesZHANGA, J; LI, X. B; NEAVE, J. H et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 488-494, issn 0022-0248, 7 p.Conference Paper